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| Preliminary data BSA 223SP OptiMOS(R) -P Small-Signal-Transistor Feature * P-Channel * Enhancement mode * Super Logic Level (2.5 V rated) * 150C operating temperature * Avalanche rated * dv/dt rated Product Summary VDS R DS(on) ID SC-75 -20 1.2 -0.39 V A Drain pin 3 Type BSA 223SP Package SC-75 Ordering Code Q67042-S4176 Marking BPs Gate pin1 Source pin 2 Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Continuous drain current TA=25C TA=70C Symbol ID Value -0.39 -0.31 -1.56 1.4 -6 Unit A Pulsed drain current TA=25C ID puls EAS dv/dt VGS Ptot Tj , Tstg Avalanche energy, single pulse ID=-0.39 A , VDD=-10V, RGS=25 mJ kV/s V W C Reverse diode dv/dt IS=-0.39A, VDS=-16V, di/dt=200A/s, Tjmax=150C Gate source voltage Power dissipation TA=25C 12 0.25 -55... +150 55/150/56 Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2002-08-26 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient, leaded RthJS RthJA Symbol min. Values typ. BSA 223SP Unit max. 150 500 K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0, I D=-250A Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) -20 -0.6 Values typ. -0.9 max. -1.2 Unit V Gate threshold voltage, VGS = V DS ID=-1.5A Zero gate voltage drain current V DS=-20V, VGS=0, Tj=25C V DS=-20V, VGS=0, Tj=150C A -0.1 -10 -10 1.27 0.7 -1 -100 -100 2.1 1.2 nA Gate-source leakage current V GS=-12V, VDS=0 Drain-source on-state resistance V GS=-2.5V, I D=-0.29A Drain-source on-state resistance V GS=-4.5, ID=-0.39A Page 2 2002-08-26 Preliminary data BSA 223SP Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time gfs Ciss Coss Crss td(on) tr td(off) tf VDD =-10V, VGS =-4.5V, ID =-0.39A, RG =6 VDS 2*ID *RDS(on)max , 0.35 ID =-0.31A VGS =0, VDS =-15V, f=1MHz Symbol Conditions min. Values typ. 0.7 45 21 17 3.8 5 5.1 3.2 max. 56 26 22 5.7 7.5 7.6 4.8 Unit S pF - ns Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =-10V, ID =-0.39A, VGS =0 to -4.5V VDD =-10V, ID =-0.39A - -0.04 -0.4 -0.5 -2.2 -0.05 -0.5 -0.62 -2.7 nC V(plateau) VDD =-10V, ID =-0.39A V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS =0, IF =-0.39 VR =-10V, |IF | = |lD |, diF /dt=100A/s IS TA=25C - -1 7.6 1.1 -0.39 A -1.56 -1.33 V 9.5 1.4 ns nC Page 3 2002-08-26 Preliminary data 1 Power dissipation Ptot = f (TA) 0.55 BSA 223SP BSA 223SP 2 Drain current ID = f (T A) parameter: |VGS| 4.5 V -0.42 BSA 223SP W 0.45 A -0.36 -0.32 0.4 P tot -0.28 ID -0.24 -0.2 -0.16 -0.12 -0.08 -0.04 0 160 0 20 40 60 80 100 120 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0 20 40 60 80 100 120 C C 160 TA TA 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25 C -10 1 BSA 223SP 4 Transient thermal impedance ZthJA = f (tp) parameter : D = t p/T 10 3 BSA 223SP K/W A 10 t = 180.0s p 2 /I D ID R DS (on ) = V DS -10 0 Z thJA 1 ms 10 1 10 0 D = 0.50 0.20 -10 -1 10 ms -1 10 0.10 0.05 0.02 10 -2 single pulse 0.01 -10 -2 -10 -1 -10 0 DC 1 -10 V -10 2 10 -3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2002-08-26 Preliminary data 5 Typ. output characteristic ID = f (VDS) parameter: Tj =25C 0.7 BSA 223SP 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS, Tj = 25 C 4 2.5V R DS(on) 3V 4V A 4.5V 6V 7V 0.5 8V 10V 2.2V 2.5V 3V 4V 4.5V 6V 7V 8V 10V 3 -I D 2.5 0.4 2 0.3 2.2V 1.5 0.2 1 0.1 0.5 0 0 0.3 0.6 0.9 V 0 1.5 0 0.1 0.2 0.3 0.4 0.5 A 0.7 -VDS -ID 7 Typ. transfer characteristics ID= f ( VGS ); |VDS| 2 x |I D| x RDS(on)max parameter: Tj = 25 C 0.7 8 Typ. forward transconductance g fs = f(I D) parameter: Tj = 25 C 1.1 S A 0.9 0.5 0.8 -ID gfs 0.4 0.3 0.2 0.1 0 0 0.5 1 1.5 2 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 V 3 0 0.1 0.2 0.3 0.4 0.5 A 0.7 -VGS Page 5 -ID 2002-08-26 Preliminary data 9 Drain-source on-resistance RDS(on) = f(Tj) parameter: ID = -0.39 A, VGS = -4.5 V 1.6 BSA 223SP 10 Typ. gate threshold voltage VGS(th) = f (T j) parameter: VGS = VDS 1.6 98% V - V GS(th) R DS(on) 1.2 1.2 98% 1 typ. 1 typ. 0.8 0.8 0.6 0.6 2% 0.4 0.4 0.2 0.2 0 -60 -20 20 60 100 C 160 0 -60 -20 20 60 100 C 160 Tj Tj 11 Typ. capacitances C = f (V DS) parameter: VGS=0, f=1 MHz, Tj = 25 C 10 2 12 Forward character. of reverse diode IF = f (V SD) parameter: Tj = 25 C -10 1 BSA 223SP A Ciss -10 0 C pF Coss -10 -1 IF T j = 25 C typ C rss T j = 150 C typ T j = 25 C (98%) T j = 150 C (98%) 10 1 -10 2 4 6 8 10 12 -2 0 V 15 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 -VDS Page 6 VSD 2002-08-26 Preliminary data 13 Typ. avalanche energy EAS = f (T j), par.: ID = -0.39 A VDD = -10 V, RGS = 25 1.4 BSA 223SP 14 Typ. gate charge VGS = f (QGate) parameter: ID = -0.39 A pulsed, T j = 25 C -16 V BSA 223SP mJ -12 1 V GS 0.8 E AS -10 -8 20% 0.6 -6 50% 80% 0.4 -4 0.2 -2 0 20 40 60 80 100 120 C 0 160 0 0.2 0.4 0.6 0.8 1 nC 1.3 Tj |QGate | 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) -24.5 BSA 223SP V -23.5 V(BR)DSS -23 -22.5 -22 -21.5 -21 -20.5 -20 -19.5 -19 -18.5 -18 -60 -20 20 60 100 C 180 Tj Page 7 2002-08-26 Preliminary data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. BSA 223SP Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2002-08-26 |
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